2003. 9. 16 1/2 semiconductor technical data KTC4377 epitaxial planar npn transistor revision no : 4 strobo flash application. high current application. features high dc current gain and excellent h fe linearity : h fe (1)=140 600(v ce =1v, i c =0.5a) : h fe (2)=70(min.), 140(typ.) (v ce =1v, i c =2a). low saturation voltage : v ce(sat) =0.5v(max.) (i c =2a, i b =50ma). small flat package. 1w (mounted on ceramic substrate). maximum rating (ta=25 ) dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 0.5+0.10/-0.05 sot-89 c j g d 123 2. collector (heat sink) a c k j f millimeters h 1. base 3. emitter b e ff d + _ + _ electrical characteristics (ta=25 ) note : h fe (1) classification a:140~240, b:200~330, c:300~450, d:420~600 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =30v, i e =0 - - 100 na emitter cut-off current i ebo v eb =6v, i c =0 - - 100 na collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 10 - - v emitter-base breakdown voltage v (br)ebo i e =1ma, i c =0 6 - - v dc current gain h fe (1) (note1) v ce =1v, i c =0.5a 140 - 600 h fe (2) v ce =1v, i c =2a 70 140 - collector-emitter saturation-voltage v ce(sat) i c =2a, i b =50ma - 0.2 0.5 v base-emitter voltage v be v ce =1v, i c =2a - 0.86 1.5 v transition frequency f t v ce =1v, i c =0.5a - 150 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 27 - pf characteristic symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ces 30 v v ceo 10 emitter-base voltage v ebo 6 v collector current dc i c 2 a pulse (note 1) i cp 4 base current dc i b 0.4 a pulse (note 1) i bp 0.8 collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 storage temperature range t stg -55 150 note 1 : pulse width 10ms, duty cycle 30% p c * : KTC4377 mounted on ceramic substrate (250mm 2 x0.8t) s type name h rank fe lot no. marking
2003. 9. 16 2/2 KTC4377 revision no : 4 dc current gain h fe collector current i (ma) c h - i collector-emitter saturation ce(sat) collector-current i (ma) c v - i safe operating area ce collector-emitter voltage v (v) c collector current i (a) i - v cce ce collector-emitter voltage v (v) c collector current i (a) i - v cbe be base emitter voltage v (v) c collector current i (a) fe c ce(sat) c voltage v (v) c collector power dissipation p (w) 0 0 ambient temperature ta ( c) c p - ta 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 mounted on ceramic substrate (250mm x 0.8t) ta=25 c 2 1 2 1 2 0 0 0 0 0.1 0.3 1 100 0.01 0.01 0.03 0.1 0.3 1 common emitter i /i =10 c b i max(pulse) c c i max(conti- * * 1 0ms 100ms * dc operation 10 3 0.01 0.03 1 0.05 0.5 ta=100 c ta=25 c ta=-25 c nuous) 10 ta=-25 c ta=25 c ta=100 c 1k ce v =1v common emitter 300 100 50 30 1 0.3 0.01 0.03 0.1 3 500 10 0.3 0.1 1.0 2.0 3.0 4.0 5.0 6.0 1.0 2.0 3.0 4.0 common emitter ta=25 c 60 25 15 10 i =5ma b 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0.8 1.6 2.4 3.2 4.0 common emitter v =1v ce ta=100 c ta=25 c ta=-25 c 31030 0.03 0.1 0.3 1 3 10 single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature *
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